OXYGEN-RELATED GETTERING OF SILICON DURING GROWTH OF BULK GAAS BRIDGMAN CRYSTALS

被引：28

作者：

MARTIN, GM

JACOB, G

HALLAIS, JP

GRAINGER, F

ROBERTS, JA

CLEGG, B

BLOOD, P

POIBLAUD, G

机构：

[1] RTC,F-14001 CAEN,FRANCE

[2] PHILIPS RES LABS,REDHIL RH1 5RF,SURREY,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 09期

关键词：

D O I：

10.1088/0022-3719/15/9/008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1841 / 1856

页数：16

共 42 条

[21] COMPENSATION MECHANISMS IN GAAS
MARTIN, GM
FARGES, JP
JACOB, G
HALLAIS, JP
POIBLAUD, G
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2840 - 2852
[22] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
MARTIN, GM
MITONNEAU, A
MIRCEA, A
[J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193
[23] MARTIN GM, 1981, I PHYS C SER, V59, P281
[24] MARTIN GM, 1980, 1ST P INT C SEM 3 5, P13
[25] MARTIN GM, 1980, THESIS U PARIS 6
[26] MARTIN GM, 1981, UNPUB
[27] OUTDIFFUSION OF DEEP ELECTRON TRAPS IN EPITAXIAL GAAS
MIRCEA, A
MITONNEAU, A
HOLLAN, L
BRIERE, A
[J]. APPLIED PHYSICS, 1976, 11 (02): : 153 - 158
[28] OSEKI M, 1979, J APPL PHYS, V50, P4808
[29] INFLUENCE OF OXYGEN ON PROPERTIES OF GAAS GROWN BY LIQUID-PHASE EPITAXY
OTSUBO, M
SEGAWA, K
MIKI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (06) : 797 - 803
[30] EFFECT OF OXYGEN INJECTION DURING VPE GROWTH OF GAAS FILMS
PALM, L
BRUCH, H
BACHEM, KH
BALK, P
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 555 - 570