OXYGEN-RELATED GETTERING OF SILICON DURING GROWTH OF BULK GAAS BRIDGMAN CRYSTALS

被引：28

作者：

MARTIN, GM

JACOB, G

HALLAIS, JP

GRAINGER, F

ROBERTS, JA

CLEGG, B

BLOOD, P

POIBLAUD, G

机构：

[1] RTC,F-14001 CAEN,FRANCE

[2] PHILIPS RES LABS,REDHIL RH1 5RF,SURREY,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 09期

关键词：

D O I：

10.1088/0022-3719/15/9/008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1841 / 1856

页数：16

共 42 条

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