STUDY OF 2 DIFFERENT DEEP LEVELS IN UNDOPED LEC SI-GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY

被引：25

作者：

KIKUTA, T

TERASHIMA, K

ISHIDA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 07期

关键词：

D O I：

10.1143/JJAP.22.L409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L409 / L411

页数：3

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