CAPTURE-CROSS-SECTION DETERMINATION BY TRANSIENT-CURRENT TRAP-FILLING EXPERIMENTS

被引：32

作者：

BORSUK, JA ^{[1
]}

SWANSON, RM ^{[1
]}

机构：

[1] STANFORD UNIV HOSP,SOLID STATE ELECTR LAB,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 11期

关键词：

D O I：

10.1063/1.328621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6704 / 6712

页数：9

共 17 条

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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (12) : 2217 - 2225
[2] ELECTRON-CAPTURE CROSS-SECTION AND ENERGY-LEVEL OF GOLD ACCEPTOR CENTER IN SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 667 - 671
[3] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3396 - 3403
[4] DETERMINATION OF DEEP-LEVEL ENERGY AND DENSITY PROFILES IN INHOMOGENEOUS SEMICONDUCTORS
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WADA, O
TAKANASHI, H
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (03) : 150 - 151
[5] CAPTURE FROM FREE-CARRIER TAILS IN THE DEPLETION REGION OF JUNCTION BARRIERS
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LEDEBO, LA
MEIJER, E
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 307 - 308
[6] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP .2. CAPTURE CROSS-SECTIONS
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KUKIMOTO, H
MILLER, GL
MERRITT, FR
[J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2499 - 2507
[7] CONSTANT-CAPACITANCE DLTS MEASUREMENT OF DEFECT-DENSITY PROFILES IN SEMICONDUCTORS
JOHNSON, NM
BARTELINK, DJ
GOLD, RB
GIBBONS, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4828 - 4833
[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[9] COMPLEX NATURE OF GOLD-RELATED DEEP LEVELS IN SILICON
LANG, DV
GRIMMEISS, HG
MEIJER, E
JAROS, M
[J]. PHYSICAL REVIEW B, 1980, 22 (08): : 3917 - 3934
[10] LANG DV, 1979, THERMALLY STIMULATED, P93

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