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CURRENT TRANSIENT SPECTROSCOPY - A HIGH-SENSITIVITY DLTS SYSTEM
被引:79
作者
:
BORSUK, JA
论文数:
0
引用数:
0
h-index:
0
BORSUK, JA
SWANSON, RM
论文数:
0
引用数:
0
h-index:
0
SWANSON, RM
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1980年
/ 27卷
/ 12期
关键词
:
D O I
:
10.1109/T-ED.1980.20255
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:2217 / 2225
页数:9
相关论文
共 15 条
[1]
LANG DJ, UNPUBLISHED
[2]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3023
-3032
[3]
LANG DV, 1979, THERMALLY STIMULATED, P93
[4]
RHODIUM AND IRIDIUM AS DEEP IMPURITIES IN SILICON
[J].
LISIAK, KP
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213
CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213
LISIAK, KP
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213
CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213
MILNES, AG
.
SOLID-STATE ELECTRONICS,
1976,
19
(02)
:115
-119
[5]
CORRELATION METHOD FOR SEMICONDUCTOR TRANSIENT SIGNAL MEASUREMENTS
[J].
MILLER, GL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MILLER, GL
;
RAMIREZ, JV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
RAMIREZ, JV
;
ROBINSON, DAH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ROBINSON, DAH
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(06)
:2638
-2644
[6]
PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE
[J].
PALS, JA
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
PALS, JA
.
SOLID-STATE ELECTRONICS,
1974,
17
(11)
:1139
-1145
[7]
NEW SPECTROSCOPIC TECHNIQUE FOR IMAGING SPATIAL-DISTRIBUTION OF NONRADIATIVE DEFECTS IN A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE
[J].
PETROFF, PM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PETROFF, PM
;
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
APPLIED PHYSICS LETTERS,
1977,
31
(02)
:60
-62
[8]
THERMAL EMISSION AND CAPTURE OF ELECTRONS AT SULFUR CENTERS IN SILICON
[J].
ROSIER, LL
论文数:
0
引用数:
0
h-index:
0
ROSIER, LL
;
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
.
SOLID-STATE ELECTRONICS,
1971,
14
(01)
:41
-+
[9]
THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
SAH, CT
;
FORBES, L
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
FORBES, L
;
ROSIER, LI
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
ROSIER, LI
;
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TASCH, AF
;
TOLE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TOLE, AB
.
APPLIED PHYSICS LETTERS,
1969,
15
(05)
:145
-+
[10]
EXPERIMENTS ON ORIGIN OF PROCESS-INDUCED RECOMBINATION CENTERS IN SILICON
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
SAH, CT
;
WANG, CT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
WANG, CT
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(04)
:1767
-1776
←
1
2
→
共 15 条
[1]
LANG DJ, UNPUBLISHED
[2]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3023
-3032
[3]
LANG DV, 1979, THERMALLY STIMULATED, P93
[4]
RHODIUM AND IRIDIUM AS DEEP IMPURITIES IN SILICON
[J].
LISIAK, KP
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213
CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213
LISIAK, KP
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213
CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213
MILNES, AG
.
SOLID-STATE ELECTRONICS,
1976,
19
(02)
:115
-119
[5]
CORRELATION METHOD FOR SEMICONDUCTOR TRANSIENT SIGNAL MEASUREMENTS
[J].
MILLER, GL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MILLER, GL
;
RAMIREZ, JV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
RAMIREZ, JV
;
ROBINSON, DAH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ROBINSON, DAH
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(06)
:2638
-2644
[6]
PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE
[J].
PALS, JA
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
PALS, JA
.
SOLID-STATE ELECTRONICS,
1974,
17
(11)
:1139
-1145
[7]
NEW SPECTROSCOPIC TECHNIQUE FOR IMAGING SPATIAL-DISTRIBUTION OF NONRADIATIVE DEFECTS IN A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE
[J].
PETROFF, PM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PETROFF, PM
;
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
APPLIED PHYSICS LETTERS,
1977,
31
(02)
:60
-62
[8]
THERMAL EMISSION AND CAPTURE OF ELECTRONS AT SULFUR CENTERS IN SILICON
[J].
ROSIER, LL
论文数:
0
引用数:
0
h-index:
0
ROSIER, LL
;
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
.
SOLID-STATE ELECTRONICS,
1971,
14
(01)
:41
-+
[9]
THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
SAH, CT
;
FORBES, L
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
FORBES, L
;
ROSIER, LI
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
ROSIER, LI
;
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TASCH, AF
;
TOLE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TOLE, AB
.
APPLIED PHYSICS LETTERS,
1969,
15
(05)
:145
-+
[10]
EXPERIMENTS ON ORIGIN OF PROCESS-INDUCED RECOMBINATION CENTERS IN SILICON
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
SAH, CT
;
WANG, CT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
WANG, CT
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(04)
:1767
-1776
←
1
2
→