RHODIUM AND IRIDIUM AS DEEP IMPURITIES IN SILICON

被引：19

作者：

LISIAK, KP ^{[1
]}

MILNES, AG ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 02期

关键词：

D O I：

10.1016/0038-1101(76)90087-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：115 / 119

页数：5

共 10 条

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[3]

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[4]

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[5]

KERN W, 1970, RCA REV, V31, P187

[6] ENERGY-LEVELS AND CONCENTRATIONS FOR PLATINUM IN SILICON [J].

LISIAK, KP ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1975, 18 (06) :533-540

[7]

LISIAK KP, TO BE PUBLISHED

[8] PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE [J].

PALS, JA .

SOLID-STATE ELECTRONICS, 1974, 17 (11) :1139-1145

[9] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].

SAH, CT ;

FORBES, L ;

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TASCH, AF .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :759-+

[10] QUENCHED-IN CENTERS IN SILICON P+N JUNCTIONS [J].

YAU, LD ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1974, 17 (02) :193-201

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