STARK-EFFECT NEAR THE TYPE-I-TYPE-II TRANSITION POINT IN SEMICONDUCTOR QUANTUM-WELLS

被引：6

作者：

KAVOKIN, AV

NESVIZHSKII, AI

机构：

[1] A.F. Ioffe Physico-Technical Institute

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.49.17055

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show the effect of an electric field normal to the quantum-well (QW) plane on the shape of a hole wave function in the vicinity of the type-I-type-II transition point, which leads to (i) the strong decrease of the oscillator strength of e1h1, e1h3 exciton states, and (ii) an increase in the strength of the e1h2 transition, which is forbidden in the absence of the field. The variational calculation of the hole wave function in a type-II QW reveals the existence of some critical electric field which initiates a shift of the hole center of mass to one of the interfaces.

引用

页码：17055 / 17058

页数：4

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