MEGAELECTRONVOLT PHOSPHORUS IMPLANTATION FOR BIPOLAR-DEVICES

被引：7

作者：

BOHM, HJ

BERNEWITZ, L

BOHM, WR

KOPL, R

机构：

[1] Siemens AG, Munich, West Ger

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 10期

关键词：

D O I：

10.1109/16.7362

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1616 / 1619

页数：4

共 11 条

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[2]

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[3]

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[4]

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[5]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[6]

MOUTHAAN T, 1986, THESIS TH TWENTE

[7]

SINGER PH, 1987, SEMICOND INT SEP, P92

[8] MEV-ENERGY B+, P+ AND AS+ ION-IMPLANTATION INTO SI [J].

TAMURA, M ;

NATSUAKI, N ;

WADA, Y ;

MITANI, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :438-446

[9]

TAMURA M, 1986, JAPAN J APPL PHYS, V25

[10] ON THE EFFECTS OF IMPLANTATION OF IONS IN THE MEV ENERGY-RANGE INTO SILICON [J].

WANG, LK ;

CHUANG, CT ;

LI, GP .

SOLID-STATE ELECTRONICS, 1986, 29 (07) :739-743

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