MEV-ENERGY B+, P+ AND AS+ ION-IMPLANTATION INTO SI

被引：75

作者：

TAMURA, M

NATSUAKI, N

WADA, Y

MITANI, E

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期

关键词：

D O I：

10.1016/0168-583X(87)90874-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：438 / 446

页数：9

共 24 条

[1] DEPTH DISTRIBUTIONS OF DEFECTS AND IMPURITIES IN 100-KEV B+ ION-IMPLANTED SILICON [J].

AKASAKA, Y ;

HORIE, K ;

YONEDA, K ;

SAKURAI, T ;

NISHI, H ;

KAWABE, S ;

TOHI, A .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :220-224

[2]

Bicknell R. W., 1970, Radiation Effects, V6, P45, DOI 10.1080/00337577008235044

[3]

BRICE DK, 1975, ION IMPLANTATION RAN, V1

[4] DAMAGE INDUCED THROUGH MEGAVOLT ARSENIC IMPLANTATION INTO SILICON [J].

BYRNE, PF ;

CHEUNG, NW ;

SADANA, DK .

APPLIED PHYSICS LETTERS, 1982, 41 (06) :537-539

[5] ION-INDUCED DEFECTS IN SEMICONDUCTORS [J].

CORBETT, JW ;

KARINS, JP ;

TAN, TY .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :457-476

[6]

Davidson S. M., 1970, Radiation Effects, V6, P33, DOI 10.1080/00337577008235043

[7]

DAVIDSON SM, 1970, P EUROPEAN C ION IMP, P238

[8]

EARNISSE EP, 1971, APPL PHYS LETT, V18, P581

[9] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J].

FAIRFIEL.JM ;

MASTERS, BJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3148-&

[10] THE STRUCTURE AND FORMATION OF ROD DEFECTS IN ION-IMPLANTED SILICON [J].

LAMBERT, JA ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (05) :1043-1052

← 1 2 3 →