DAMAGE INDUCED THROUGH MEGAVOLT ARSENIC IMPLANTATION INTO SILICON

被引：43

作者：

BYRNE, PF

CHEUNG, NW

SADANA, DK

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

关键词：

D O I：

10.1063/1.93581

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：537 / 539

页数：3

共 9 条

[1]

BRICE DK, 1975, ION IMPLANTATION RAN, V1

[2]

BYRNE PF, 1982, UNPUB INT C METALLUR

[3]

CHRISTEL LA, 1981, APPL PHYS LETT, V52, P7143

[4]

DOKEN M, 1981, P INT ELECTRON DEVIC, P586

[5]

Lau S. S., 1978, Thin films. Interdiffusion and reactions, P433

[6] ION-IMPLANTED FET FOR POWER APPLICATIONS [J].

LECROSNIER, DP ;

PELOUS, GP .

SADANA, DK ;

STRATHMAN, M ;

WASHBURN, J ;

MAGEE, CW ;

MAENPAA, M ;

BOOKER, GR .

[8]

SILCOX J, 1959, PHILOS MAG, V72

[9]

ZIEGLER JF, 1971, IBM J RES DEV NOV, P452