HIGH POWER GATE-CONTROLLED SWITCH

[1] TURN-OFF GAIN IN P-N-P-N TRIODES [J]. SOLID-STATE ELECTRONICS, 1961, 3 (02) : 119 - 122

[2] NOTES ON THE THEORY OF 4-LAYER SEMICONDUCTOR SWITCHES [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 143 - 148

[3] LONGO TA, 1962, IRE WESCON CONV RE 3, P1

[4] NEW TCT, Patent No. 3210563

[5] STORM FH, 1963, WIN IEEE GEN M NEW Y

[6] VANLIGTEN RH, 1960, IRE WESCON CONV RE 3, P49

[7] GATE TURN-OFF IN P-N-P-N DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) : 590 - &

[1] TURN-OFF GAIN IN P-N-P-N TRIODES [J]. SOLID-STATE ELECTRONICS, 1961, 3 (02) : 119 - 122

[2] NOTES ON THE THEORY OF 4-LAYER SEMICONDUCTOR SWITCHES [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 143 - 148

[3] LONGO TA, 1962, IRE WESCON CONV RE 3, P1

[4] NEW TCT, Patent No. 3210563

[5] STORM FH, 1963, WIN IEEE GEN M NEW Y

[6] VANLIGTEN RH, 1960, IRE WESCON CONV RE 3, P49

[7] GATE TURN-OFF IN P-N-P-N DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) : 590 - &