TURN-OFF GAIN IN P-N-P-N TRIODES

[1] 2-TERMINAL ASYMMETRICAL AND SYMMETRICAL SILICON NEGATIVE RESISTANCE SWITCHES [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) : 1819 - 1824

[2] 4-TERMINAL P-N-P-N-TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1361 - 1364

[3] THE ELECTRICAL CHARACTERISTICS OF SILICON P-N-P-N TRIODES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1229 - 1235

[4] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[5] Mueller C.W., 1958, IRE T ELECT DEVICES, V5, P2, DOI [10.1109/T-ED.1958.14318, DOI 10.1109/T-ED.1958.14318]

[6] TANENBAUM M, 1956, AT&T TECH J, V35, P1

[1] 2-TERMINAL ASYMMETRICAL AND SYMMETRICAL SILICON NEGATIVE RESISTANCE SWITCHES [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) : 1819 - 1824

[2] 4-TERMINAL P-N-P-N-TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1361 - 1364

[3] THE ELECTRICAL CHARACTERISTICS OF SILICON P-N-P-N TRIODES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1229 - 1235

[4] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[5] Mueller C.W., 1958, IRE T ELECT DEVICES, V5, P2, DOI [10.1109/T-ED.1958.14318, DOI 10.1109/T-ED.1958.14318]

[6] TANENBAUM M, 1956, AT&T TECH J, V35, P1