ELECTRONIC STATES OF CDIN2S4 AND OF OTHER II-III2-VI4 COMPOUNDS - HOW SENSITIVE ARE THEY TO THE CRYSTAL-STRUCTURE

被引：12

作者：

CERRINA, F

QUARESIMA, C

ABBATI, I

BRAICOVICH, L

PICCO, P

MARGARITONDO, G

机构：

[1] POLITOCN MILANO,IST FIS,GNSM,MILAN,ITALY

[2] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 33卷 / 04期

关键词：

D O I：

10.1016/0038-1098(80)90436-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：429 / 431

页数：3

共 13 条

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[5] VALENCE BAND PHOTOEMISSION SPECTROSCOPY OF A TERNARY LAYERED SEMICONDUCTOR - ZNIN2S4 [J].

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[7] PHOTOEMISSION SPECTROSCOPY USING SYNCHROTRON RADIATION .1. OVERVIEWS OF VALENCE-BAND STRUCTURE FOR GE, GAAS, GAP, INSB, ZNSE, CDTE, AND AGL [J].

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ERBUDAK, M .

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IHARA H, 1978, SOLID STATE COMMUN, V28, P436

[9]

Lappe F., 1962, Z KRISTALLOGR, V117, P146

[10] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY [J].

LEY, L ;

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