P-TYPE ZNSE BY NITROGEN ATOM BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：575

作者：

PARK, RM ^{[1
]}

TROFFER, MB ^{[1
]}

ROULEAU, CM ^{[1
]}

DEPUYDT, JM ^{[1
]}

HAASE, MA ^{[1
]}

机构：

[1] THREE M CO,3M CTR,ST PAUL,MN 55144

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 20期

关键词：

D O I：

10.1063/1.103919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel approach to producing p-type ZnSe epitaxial layers is reported which involves nitrogen atom beam doping during molecular beam epitaxial growth. Net acceptor concentrations as large as 3.4×1017 cm -3 have been measured in nitrogen atom beam doped ZnSe/GaAs heteroepitaxial layers which represents the highest acceptor concentration reported to date for ZnSe:N epitaxial material grown by molecular beam epitaxy. In addition, light-emitting diodes based on ZnSe:N/ZnSe:Cl, p-n homojunctions have been found to exhibit dominant electroluminescence in the blue region of the visible spectrum at room temperature.

引用

页码：2127 / 2129

页数：3

共 13 条

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