PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

被引：58

作者：

PARK, RM

MAR, HA

SALANSKY, NM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.336212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1047 / 1049

页数：3

相关论文

共 11 条

[1] THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS
BHARGAVA, RN
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 15 - 26
[2] IONIZATION-ENERGY OF THE SHALLOW NITROGEN ACCEPTOR IN ZINC SELENIDE
DEAN, PJ
STUTIUS, W
NEUMARK, GF
FITZPATRICK, BJ
BHARGAVA, RN
[J]. PHYSICAL REVIEW B, 1983, 27 (04) : 2419 - 2428
[3] DONOR BOUND-EXCITON EXCITED-STATES IN ZINC SELENIDE
DEAN, PJ
HERBERT, DC
WERKHOVEN, CJ
FITZPATRICK, BJ
BHARGAVA, RN
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 4888 - 4901
[4] SPECTROSCOPIC STUDIES OF ZNSE GROWN BY LIQUID-PHASE EPITAXY
FITZPATRICK, BJ
WERKHOVEN, CJ
MCGEE, TF
HARNACK, PM
HERKO, SP
BHARGAVA, RN
DEAN, PJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (04) : 440 - 444
[5] LI DOPED ZNSE AND PROBLEMS OF P-TYPE CONDUCTION
NEUMARK, GF
HERKO, SP
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 189 - 195
[6] MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE ON (100)GAAS BY COMPOUND SOURCE AND SEPARATE SOURCE EVAPORATION - A COMPARATIVE-STUDY
PARK, RM
MAR, HA
SALANSKY, NM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 676 - 680
[7] DOMINANT INTRINSIC-EXCITON RELATED LUMINESCENCE FROM ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
PARK, RM
MAR, HA
SALANSKY, NM
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 386 - 387
[8] GROWTH AND DOPING OF ZNSE AND ZNSXSE1-X BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION
STUTIUS, W
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 1 - 9
[9] SHALLOW N-ACCEPTOR IN N+-IMPLANTED ZNSE
WU, ZL
MERZ, JL
WERKHOVEN, CJ
FITZPATRICK, BJ
BHARGAVA, RN
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 345 - 346
[10] ELECTRICAL AND PHOTO-LUMINESCENCE PROPERTIES OF ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY - SUBSTRATE-TEMPERATURE EFFECT
YAO, T
OGURA, M
MATSUOKA, S
MORISHITA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03): : L144 - L146