POINT-DEFECT GENERATION DURING HIGH-TEMPERATURE ANNEALING OF THE SI-SIO2 INTERFACE

被引:89
作者
DEVINE, RAB
MATHIOT, D
WARREN, WL
FLEETWOOD, DM
ASPAR, B
机构
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
[2] CEN,DTA,LETI,F-38041 GRENOBLE,FRANCE
关键词
D O I
10.1063/1.110275
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spectroscopic identification of the microscopic defects responsible for annealing induced degradation of the oxide in Si/SiO2/Si structures is presented. Hole injection or x irradiation reveals the presence of oxygen-vacancy centers and oxygen-vacancy center/Si interstitial complexes in the oxide following annealing. O related donors in the Si substrate are also present. These defects result from the diffusion of O from the SiO2 network into the Si; the primary driving force for O diffusion is the difference in the chemical potential of the O in the two phases.
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页码:2926 / 2928
页数:3
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