KINETICS OF HIGH-TEMPERATURE THERMAL-DECOMPOSITION OF SIO2 ON SI(100)

[1] DIRECT EVIDENCE FOR 1NM PORES IN DRY THERMAL SIO2 FROM HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2722 - 2728

[2] HIGH-TEMPERATURE OXIDATION, REDUCTION, AND VOLATILIZATION REACTIONS OF SILICON AND SILICON-CARBIDE [J]. OXIDATION OF METALS, 1972, 4 (03): : 181 - +

[3] HOFMAN K, IN PRESS J APPL PHYS

[4] DEFECT FORMATION IN THERMAL SIO2 BY HIGH-TEMPERATURE ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1525 - 1527

[5] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1708 - 1714

[6] KOBAYASHI M, 1985, EXTENDED ABSTRACTS E, P94

[7] INFLUENCE OF THIN SIO2 INTERLAYERS ON CHEMICAL-REACTION AND MICROSTRUCTURE AT THE NI/SI(111) INTERFACE [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5517 - 5525

[8] REACTION OF OXYGEN WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1300 - 1306

[9] HIGH-TEMPERATURE SIO2 DECOMPOSITION AT THE SIO2/SI INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2332 - 2335

[1] DIRECT EVIDENCE FOR 1NM PORES IN DRY THERMAL SIO2 FROM HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2722 - 2728

[2] HIGH-TEMPERATURE OXIDATION, REDUCTION, AND VOLATILIZATION REACTIONS OF SILICON AND SILICON-CARBIDE [J]. OXIDATION OF METALS, 1972, 4 (03): : 181 - +

[3] HOFMAN K, IN PRESS J APPL PHYS

[4] DEFECT FORMATION IN THERMAL SIO2 BY HIGH-TEMPERATURE ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1525 - 1527

[5] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1708 - 1714

[6] KOBAYASHI M, 1985, EXTENDED ABSTRACTS E, P94

[7] INFLUENCE OF THIN SIO2 INTERLAYERS ON CHEMICAL-REACTION AND MICROSTRUCTURE AT THE NI/SI(111) INTERFACE [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5517 - 5525

[8] REACTION OF OXYGEN WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1300 - 1306

[9] HIGH-TEMPERATURE SIO2 DECOMPOSITION AT THE SIO2/SI INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2332 - 2335