DEFECT FORMATION IN THERMAL SIO2 BY HIGH-TEMPERATURE ANNEALING

被引：40

作者：

HOFMANN, K ^{[1
]}

RUBLOFF, GW ^{[1
]}

MCCORKLE, RA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 22期

关键词：

D O I：

10.1063/1.97322

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1525 / 1527

页数：3

共 11 条

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