HIGH-TEMPERATURE SIO2 DECOMPOSITION AT THE SIO2/SI INTERFACE

[1] ASLAM M, 1984, SOLID STATE ELECTRON, V27, P709

[2] DIRECT EVIDENCE FOR 1NM PORES IN DRY THERMAL SIO2 FROM HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2722 - 2728

[3] SILICON OXIDATION STUDIES - A REVISED MODEL FOR THERMAL-OXIDATION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5416 - 5420

[4] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1708 - 1714

[5] KOBAYASHI M, 1985, UNPUB ELECTROCHEMICA, P94

[6] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 2089 - &

[7] HIGH-TEMPERATURE ANNEALING OF OXIDIZED SILICON SURFACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1463 - +

[8] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[9] 1971, NBS37 NAT STAND REF

[1] ASLAM M, 1984, SOLID STATE ELECTRON, V27, P709

[2] DIRECT EVIDENCE FOR 1NM PORES IN DRY THERMAL SIO2 FROM HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2722 - 2728

[3] SILICON OXIDATION STUDIES - A REVISED MODEL FOR THERMAL-OXIDATION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5416 - 5420

[4] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1708 - 1714

[5] KOBAYASHI M, 1985, UNPUB ELECTROCHEMICA, P94

[6] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 2089 - &

[7] HIGH-TEMPERATURE ANNEALING OF OXIDIZED SILICON SURFACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1463 - +

[8] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[9] 1971, NBS37 NAT STAND REF