SILICON OXIDATION STUDIES - A REVISED MODEL FOR THERMAL-OXIDATION

被引：75

作者：

IRENE, EA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332722

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5416 / 5420

页数：5

共 23 条

[1]

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[3]

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[4] VISCOUS-FLOW OF THERMAL SIO2 [J].

EERNISSE, EP .

APPLIED PHYSICS LETTERS, 1977, 30 (06) :290-293

[5]

EVANS UR, 1960, CORROSION OXIDATION, pCH20

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[8] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J].

HOPPER, MA ;

CLARKE, RA ;

YOUNG, L .

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[9] SILICON OXIDATION STUDIES - MEASUREMENT OF THE DIFFUSION OF OXIDANT IN SIO2-FILMS [J].

IRENE, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) :413-417

[10] A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES [J].

IRENE, EA ;

TIERNEY, E ;

ANGILELLO, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2594-2597

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