INFLUENCE OF THIN SIO2 INTERLAYERS ON CHEMICAL-REACTION AND MICROSTRUCTURE AT THE NI/SI(111) INTERFACE

被引：33

作者：

LIEHR, M

LEFAKIS, H

LEGOUES, FK

RUBLOFF, GW

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.33.5517

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：5517 / 5525

页数：9

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