GAAS PLANAR GUNN DIGITAL DEVICES WITH SUBSIDIARY ANODE

被引：10

作者：

KURUMADA, K ^{[1
]}

MIZUTANI, T ^{[1
]}

FUJIMOTO, M ^{[1
]}

机构：

[1] ELECT COMMUN LABS,MIDORI,MUSASHINO 180,TOKYO,JAPAN

来源：

关键词：

D O I：

10.1049/el:19740122

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：161 / 163

页数：3

共 8 条

[1] CHARLTON R, 1973, IEEE T, VED20, P812
[2] GRUBIN HL, 1973, IEEE T ELECTRON DEV, VED20, P63
[3] JEPPESEN P, 1973, IEEE T ELECTRON DEVI, VED20, P371
[4] KURUMADA K, TO BE PUBLISHED
[5] SIMPLE INTEGRATED-CIRCUIT WITH GUNN DEVICES
MAUSE, K
[J]. ELECTRONICS LETTERS, 1972, 8 (03) : 62 - +
[6] MECHANISM FOR MICROWAVE AMPLIFICATION IN SUPERCRITICALLY DOPED GAAS
SPITALNIK, R
SHAW, MP
RABIER, A
MAGARSHACK, J
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (04) : 162 - 164
[7] SCHOTTKY-GATE BULK EFFECT DIGITAL DEVICES
SUGETA, T
YANAI, H
SEKIDO, K
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (11): : 1629 - &
[8] TAKEUCHI M, 1972, IEEE T ELECTRON DEVI, VED19, P125