MECHANISM FOR MICROWAVE AMPLIFICATION IN SUPERCRITICALLY DOPED GAAS

被引:12
作者
SPITALNIK, R
SHAW, MP
RABIER, A
MAGARSHACK, J
机构
关键词
D O I
10.1063/1.1654596
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:162 / 164
页数:3
相关论文
共 25 条
[1]   INFLUENCE OF BOUNDARY CONDITIONS ON HIGH-FIELD DOMAINS IN GUNN DIODES [J].
BOER, KW ;
DOHLER, G .
PHYSICAL REVIEW, 1969, 186 (03) :793-&
[2]   TRANSITION BETWEEN STATIONARY AND MOVING HIGH-FIELD DOMAINS IN CDS IN A RANGE OF N-SHAPED NEGATIVE DIFFERENTIAL CONDUCTIVITY DUE TO FIELD-QUENCHING [J].
BOER, KW ;
VOSS, P .
PHYSICA STATUS SOLIDI, 1968, 30 (01) :291-+
[3]   STABILISATION MECHANISM FOR SUPERCRITICAL TRANSFERRED-ELECTRON AMPLIFIERS [J].
CHARLTON ;
FREEMAN, KR ;
HOBSON, GS .
ELECTRONICS LETTERS, 1971, 7 (19) :575-&
[4]   BOUNDARY CONDITIONS AND HIGH-FIELD DOMAINS IN GAAS [J].
CONWELL, EM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) :262-+
[5]   CURRENT INSTABILITIES IN N-INP [J].
GRUBIN, HL ;
SHAW, MP ;
CONWELL, EM .
APPLIED PHYSICS LETTERS, 1971, 18 (06) :211-&
[6]  
GRUBIN HL, TO BE PUBLISHED
[8]   EFFECT OF NONUNIFORM CONDUCTIVITY ON BEHAVIOR OF GUNN EFFECT SAMPLES [J].
HASTY, TE ;
STRATTON, R ;
JONES, EL .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4623-+
[9]   INFLUENCE OF DIFFUSION ON STABILITY OF SUPERCRITICAL TRANSFERRED ELECTRON AMPLIFIER [J].
JEPPESEN, P ;
JEPPSSON, B .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (04) :452-+
[10]   ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].
KENNEDY, DP ;
MURLEY, PC ;
KLEINFELDER, W .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) :399-+