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- [6] SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES[J]. APPLIED PHYSICS LETTERS, 1966, 9 (04) : 140 - +COPELAND, JA
- [7] GUNN EFFECT IN POLAR SEMICONDUCTORS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 79 - +FOYT, AGMCWHORTER, AL
- [8] PROPERTIES OF A FREE STEADILY TRAVELLING ELECTRICAL DOMAIN IN GAAS[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (04) : 300 - +GUNN, JB
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