PROPERTIES OF A FREE STEADILY TRAVELLING ELECTRICAL DOMAIN IN GAAS

被引：77

作者：

GUNN, JB

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1966年 / 10卷 / 04期

关键词：

D O I：

10.1147/rd.104.0300

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

收藏

页码：300 / +

页数：1

相关论文

共 14 条

[1] ELECTROSTATIC DOMAINS IN 2-VALLEY SEMICONDUCTORS
COPELAND, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 189 - +
[2] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM
EFFER, D
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1020 - &
[3] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS
EHRENREICH, H
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963
[4] GUNN EFFECT IN POLAR SEMICONDUCTORS
FOYT, AG
MCWHORTER, AL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 79 - +
[5] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS
GUNN, JB
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &
[6] EFFECT OF ELECTRON AND IMPURITY DENSITY ON THE FIELD-DEPENDENCE OF MOBILITY IN GERMANIUM
GUNN, JB
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 239 - 241
[7] GUNN JB, 1965, 1964 P S PLASM EFF S, P199
[8] GUNN JM, TO BE PUBLISHED
[9] SOME PROPERTIES OF MOVING HIGH-FIELD DOMAIN IN GUNN EFFECT DEVICES
HEEKS, JS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 68 - +
[10] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS
HILSUM, C
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &