EPITAXIAL-GROWTH OF AGGAS2 ON (100) GAAS BY EXCIMER-LASER DEPOSITION

被引：5

作者：

UCHIKI, H

HIRASAWA, H

HASEGAWA, I

机构：

[1] Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka, 940-21

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 7B期

关键词：

EPITAXY; AGGAS2; GAAS SUBSTRATE; EXCIMER LASER DEPOSITION; PHOTOLUMINESCENCE;

D O I：

10.1143/JJAP.33.L983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial AgGaS2 filMS were grown on (100) GaAs substrates by means of XeCl excimer laser deposition. Mixed powders of Ag2S and Ga2S3 were used as a target. The diffraction lines from the (004) and (008) planes of AgGaS2 appeared in an X-rav diffraction pattern. Weak, possibly excitonic, band-edge emission and intense broad green emission were observed in photoluminescence spectra upon excitation by the 365 nm line from a Hg-Xe lamp.

引用

页码：L983 / L985

页数：3

共 7 条

[1] SOME CHARACTERISTICS OF AGGAS2 SINGLE-CRYSTALS GROWN FROM THE MELT [J].