OPTICAL INVESTIGATION OF THE HEAVY HOLE-LIGHT HOLE SPLITTING IN THIN GAAS/GAALAS QUANTUM WELLS

被引：13

作者：

LARUELLE, F

ETIENNE, B

机构：

[1] CNRS, Bagneux, Fr, CNRS, Bagneux, Fr

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 65卷 / 07期

关键词：

CRYSTALS - Physical Properties;

D O I：

10.1016/0038-1098(88)90339-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A study of the optical properties of thin GaAs/GaAlAs quantum wells shows that the heavy hole-light hole splitting reaches a maximum for a well thickness of approximately equals 9 monolayers and decreases rapidly for smaller thicknesses. These results with calculations made in the envelope function approximation.

引用

页码：565 / 569

页数：5

共 7 条

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