共 18 条
[1]
STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (04)
:1014-1021
[4]
EFFECT OF WELL SIZE FLUCTUATION ON PHOTO-LUMINESCENCE SPECTRUM OF ALAS-GAAS SUPER-LATTICES
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1983, 22 (10)
:1489-1492
[6]
BINDING-ENERGY OF BIEXCITONS AND BOUND EXCITONS IN QUANTUM WELLS
[J].
PHYSICAL REVIEW B,
1983, 28 (02)
:871-879
[9]
EXTRINSIC PHOTO-LUMINESCENCE FROM GAAS QUANTUM WELLS
[J].
PHYSICA B & C,
1983, 117 (MAR)
:714-716
[10]
BOUND EXCITONS IN P-DOPED GAAS QUANTUM WELLS
[J].
SOLID STATE COMMUNICATIONS,
1982, 43 (07)
:519-522