ELECTRON-HOLE DRAG IN SEMICONDUCTORS

被引：5

作者：

HOPFEL, RA ^{[1
]}

SHAH, J ^{[1
]}

机构：

[1] AT&T BELL LABS, HOLMDEL, NJ 07733 USA

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 3-4期

关键词：

D O I：

10.1016/0038-1101(88)90359-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：643 / 648

页数：6

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