PROPERTIES OF AMBIENT-ENHANCED PHOTO-LUMINESCENCE FROM INP AND GAAS-SURFACES

被引：10

作者：

NAGAI, H

TOHNO, S

MIZUSHIMA, Y

机构：

[1] Musashino Electrical Communication Laboratory, NTT, Musashino-shi, Tokyo 180, 3-9-11, Midori-cho

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 08期

关键词：

D O I：

10.1063/1.326595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescent properties due to ambient gas are investigated. Photoluminescence (PL) as a function of gas pressure indicates a molecular adsorption. Curious gas-flow effect on PL intensity from InP and GaAs surface is observed. Gas-feeding condition on the sample crystal surface affects the PL intensity in all of the examined gases (N2, Ar, H2, and O2). Various factors which are assumed to be the cause of this phenomenon were discussed, and the molecular adsorption is found to be the possible mechanism.

引用

页码：5446 / 5448

页数：3