EQUILIBRIUM STRUCTURES OF SI(100) STEPPED SURFACES

被引：171

作者：

POON, TW

YIP, S

HO, PS

ABRAHAM, FF

机构：

[1] MIT,DEPT NUCL ENGN,CAMBRIDGE,MA 02139

[2] IBM CORP,ALMADEN RES CTR,DIV RES,SAN JOSE,CA 95120

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.65.2161

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Atomistic calculations using the Stillinger-Weber interatomic potential show that stress relaxation can lower the energy of a Si(100) stepped surface below that of the flat surface. Two types of elastic interactions are identified: One is due to stress anisotropy which occurs only on single-stepped surfaces and has a logarithmic dependence on ledge separation l; the other is associated with ledge rebonding, present in both single- and double-stepped surfaces, and has a variation of l-2. On the vicinal Si(001), single-layer ledges are predicted to be favored over double-layer ledges at low miscut angles with the crossover occurring at about 1°at zero temperature, and at 3°at 500 K, in agreement with experiment. © 1990 The American Physical Society.

引用

页码：2161 / 2164

页数：4

共 15 条

[11] POON T, IN PRESS
[12] POON TW, 1990, THESIS MIT
[13] DETERMINATION OF TERRACE SIZE AND EDGE ROUGHNESS IN VICINAL SI(100) SURFACES BY SURFACE-SENSITIVE DIFFRACTION
SALONER, D
MARTIN, JA
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SAVAGE, DE
AUMANN, CE
LAGALLY, MG
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 2884 - 2893
[14] COMPUTER-SIMULATION OF LOCAL ORDER IN CONDENSED PHASES OF SILICON
STILLINGER, FH
WEBER, TA
[J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5262 - 5271
[15] TUNNELING IMAGES OF BIATOMIC STEPS ON SI(001)
WIERENGA, PE
KUBBY, JA
GRIFFITH, JE
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (19) : 2169 - 2172

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