THE (100) SILICON-SILICON DIOXIDE INTERFACE .1. THEORETICAL ENERGY STRUCTURE

[1] ELECTRON-ENERGY LOSS SPECTROSCOPY STUDIES OF THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 199 - 201

[2] SI (100) SURFACE .2. THEORETICAL-STUDY OF RELAXED SURFACE [J]. PHYSICAL REVIEW B, 1975, 12 (12): : 5749 - 5757

[3] BLOCH F, 1928, Z PHYS, V52, P555, DOI DOI 10.1007/BF01339455

[4] DIFFRACTION OF HE ATOMS AT A SI(100) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (17) : 1148 - 1151

[5] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (15) : 1062 - 1065

[6] SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1290 - 1296

[7] SPECIAL POINTS IN BRILLOUIN ZONE [J]. PHYSICAL REVIEW B, 1973, 8 (12): : 5747 - 5753

[8] THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF THE ELECTRONIC-STRUCTURE OF OXYGEN ON SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1216 - 1220

[9] Distefano T.H., 1978, PHYSICS SIO2 ITS INT, P362

[10] FIELD-DEPENDENT INTERNAL PHOTOEMISSION PROBE OF ELECTRONIC-STRUCTURE OF SI-SIO2 INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 856 - 859

[1] ELECTRON-ENERGY LOSS SPECTROSCOPY STUDIES OF THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 199 - 201

[2] SI (100) SURFACE .2. THEORETICAL-STUDY OF RELAXED SURFACE [J]. PHYSICAL REVIEW B, 1975, 12 (12): : 5749 - 5757

[3] BLOCH F, 1928, Z PHYS, V52, P555, DOI DOI 10.1007/BF01339455

[4] DIFFRACTION OF HE ATOMS AT A SI(100) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (17) : 1148 - 1151

[5] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (15) : 1062 - 1065

[6] SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1290 - 1296

[7] SPECIAL POINTS IN BRILLOUIN ZONE [J]. PHYSICAL REVIEW B, 1973, 8 (12): : 5747 - 5753

[8] THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF THE ELECTRONIC-STRUCTURE OF OXYGEN ON SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1216 - 1220

[9] Distefano T.H., 1978, PHYSICS SIO2 ITS INT, P362

[10] FIELD-DEPENDENT INTERNAL PHOTOEMISSION PROBE OF ELECTRONIC-STRUCTURE OF SI-SIO2 INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 856 - 859