THEORY OF DONOR-BOUND MULTIEXCITON COMPLEXES IN GERMANIUM AND SILICON

[1] AGGARWAL RL, 1965, PHYS REV, V140, P1246

[2] [Anonymous], COMMUNICATION

[3] BAGAEV VS, 1975, JETP LETT+, V21, P80

[4] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1973, 8 (06) : 2697 - 2709

[5] ELECTRON-HOLE LIQUIDS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1973, 7 (04): : 1508 - 1523

[6] EXCITATION-SPECTRA OF BOUND EXCITONS AND BOUND MULTIEXCITON COMPLEXES IN N-TYPE SI [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (06) : 471 - 474

[7] HYSTERESIS EFFECT AND SURFACE-ENERGY OF DROPS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1977, 24 (04) : 335 - 338

[8] SYSTEMATICS OF BOUND EXCITONS AND BOUND MULTIEXCITON COMPLEXES FOR SHALLOW DONORS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1978, 28 (07) : 491 - 496

[9] EXCHANGE AND CORRELATION IN ATOMS, MOLECULES, AND SOLIDS BY SPIN-DENSITY FUNCTIONAL FORMALISM [J]. PHYSICAL REVIEW B, 1976, 13 (10) : 4274 - 4298

[10] HOHENBERG P, 1964, PHYS REV, V136, pB804

[1] AGGARWAL RL, 1965, PHYS REV, V140, P1246

[2] [Anonymous], COMMUNICATION

[3] BAGAEV VS, 1975, JETP LETT+, V21, P80

[4] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1973, 8 (06) : 2697 - 2709

[5] ELECTRON-HOLE LIQUIDS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1973, 7 (04): : 1508 - 1523

[6] EXCITATION-SPECTRA OF BOUND EXCITONS AND BOUND MULTIEXCITON COMPLEXES IN N-TYPE SI [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (06) : 471 - 474

[7] HYSTERESIS EFFECT AND SURFACE-ENERGY OF DROPS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1977, 24 (04) : 335 - 338

[8] SYSTEMATICS OF BOUND EXCITONS AND BOUND MULTIEXCITON COMPLEXES FOR SHALLOW DONORS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1978, 28 (07) : 491 - 496

[9] EXCHANGE AND CORRELATION IN ATOMS, MOLECULES, AND SOLIDS BY SPIN-DENSITY FUNCTIONAL FORMALISM [J]. PHYSICAL REVIEW B, 1976, 13 (10) : 4274 - 4298

[10] HOHENBERG P, 1964, PHYS REV, V136, pB804