共 16 条
- [1] AGGARWAL RL, 1965, PHYS REV, V140, P1246
- [2] ALTUKHOV PD, 1977, JETP LETT, V26, P338
- [3] ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (09) : 1099 - 1210
- [4] EXCITATION SPECTRUM OF BISMUTH DONORS IN SILICON [J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3200 - 3209
- [5] KAMINSKII AS, 1970, JETP LETT-USSR, V11, P255
- [6] NEW MODEL FOR BOUND MULTI-EXCITON COMPLEXES [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (08) : 713 - 715
- [7] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J]. PHYSICAL REVIEW B, 1974, 9 (02): : 723 - 726
- [8] LUMINESCENCE ASSOCIATED WITH TRANSITIONS FROM AN EXCITED-STATE OF BOUND EXCITONS IN P, AS, SB AND BI DOPED SI [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (24): : L713 - L718
- [9] FINE-STRUCTURE IN BOUND EXCITON AND MULTIPLE BOUND EXCITON LUMINESCENCE FROM ALUMINUM-DOPED SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (09): : L247 - L250
- [10] LYON SA, PHYS REV B