MOSSBAUER-EFFECT AND PERTURBED ANGULAR-CORRELATION MEASUREMENTS ON XE-129M IMPLANTED IN DIAMOND

被引：4

作者：

VANROSSUM, M

DEBRUYN, J

LANGOUCHE, G

ROTS, M

OOMS, H

CLAES, J

NAMAVAR, F

COUSSEMENT, R

机构：

来源：

HYPERFINE INTERACTIONS | 1978年 / 4卷 / 1-2期

关键词：

D O I：

10.1007/BF01021923

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

引用

页码：727 / 731

页数：5

共 7 条

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DENHARTO.J ;

ERIKSSON, L ;

MAYER, JW .

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[3] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J].

ERIKSSON, L ;

DAVIES, JA ;

JOHANSSON, NG ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :842-+

[4]

PERLOW GJ, 1968, CHEMICAL APPLICATION, P422

[5]

ROTS M, UNPUBLISHED

[6]

VANROSSUM M, 1976, J PHYSIQUE, V37, P66

[7] THEORY OF DIFFUSION AND EQUILIBRIUM POSITION OF INTERSTITIAL IMPURITIES IN DIAMOND LATTICE [J].

WEISER, K .

PHYSICAL REVIEW, 1962, 126 (04) :1427-&

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