ELECTRIC PROPERTIES - METALLOGRAPHY - Microstructures - SPUTTERING;
D O I:
10.1016/0040-6090(87)90321-X
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The effect of grain growth in indium tin oxide films deposited using the d. c. sputtering technique was studied as a function of annealing temperature. The results were correlated with the observed electrical properties.