MICROSTRUCTURE OF INDIUM TIN OXIDE-FILMS PRODUCED BY THE DC SPUTTERING TECHNIQUE

被引：25

作者：

CHAUDHURI, S

BHATTACHARYYA, J

PAL, AK

机构：

[1] Indian Assoc for the Cultivation of, Science, Calcutta, India, Indian Assoc for the Cultivation of Science, Calcutta, India

来源：

THIN SOLID FILMS | 1987年 / 148卷 / 03期

关键词：

ELECTRIC PROPERTIES - METALLOGRAPHY - Microstructures - SPUTTERING;

D O I：

10.1016/0040-6090(87)90321-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of grain growth in indium tin oxide films deposited using the d. c. sputtering technique was studied as a function of annealing temperature. The results were correlated with the observed electrical properties.

引用

页码：279 / 284

页数：6