ELECTRICAL AND STRUCTURAL ASSESSMENT OF CDTE AND CDMNTE LAYERS GROWN BY MBE ON INSB SUBSTRATES

Single layers and multiple quantum wells (MQWs) of CdTe and CdMnTe have been grown by MBE on InSb substrates. These systems have been analysed using double crystal X-ray diffraction (DCXRD). The single layers have been shown to be of good structural quality while the MQW systems yield rocking curves with well resolved diffraction satellites (up to the seventh order) indicating good quality and periodicity. All undoped layers have been found to be n-type with free carrier concentrations in the range 1014-1015cm-3 but the densities for CdMnTe layers are generallyless than for CdTe layers grown under identical conditions. When doped with indium, both types of layers have exhibited a saturation in carrier concentration as the In atom concentration was increased beyond 1018 cm-3 probably as a result of the generation of compensating acceptor states. © 1989.