THE EFFECT OF ANNEALING ON THE OPTICAL AND ELECTRICAL-PROPERTIES OF A-SI-H SPUTTERED FILMS

被引：10

作者：

LAAZIZ, Y

BENNOUNA, A

AMEZIANE, EL

机构：

[1] L.P.S.C.M., Faculté des Sciences, Département de Physique, Marrakech

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1993年 / 31卷 / 01期

关键词：

D O I：

10.1016/0927-0248(93)90004-M

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work we study the influence of an annealing treatment at high temperatures on the optical and electrical properties of a-Si:H sputtered films. The results show important changes of the different parameters determined after annealing. A possible model of the silicon matrix evolution during annealing is proposed, and the dependence of the energy gap on disorder and hydrogen concentration is discussed.

引用

页码：23 / 32

页数：10

共 19 条

[1]

BENAZOUZ MM, 1987, THESIS FS MARRAKECH

[2] THE INFLUENCE OF THICKNESS AND INDEX INHOMOGENEITIES ON THE TRANSMISSION OF SEMICONDUCTOR THIN-FILMS [J].