Electrical characterization of PLT thin films by LP-MOCVD

被引：7

作者：

Lee, SS ^{[1
]}

Kim, HG ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT MAT SCI & ENGN,TAEJON 305701,SOUTH KOREA

来源：

INTEGRATED FERROELECTRICS | 1995年 / 11卷 / 1-4期

关键词：

D O I：

10.1080/10584589508013586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

La-modified lead titanate(PLT) thin films were prepared on Pt/SiO2/Si substrate by hot-wall type low pressure-metalorganic chemical vapor deposition(LP-MOCVD). The films were deposited at 500 degrees C under the low pressure of 1000m Torr. The films were annealed at 650 degrees C for 10min with O-2 ambient before top-Pt electroding. Schottky emission was observed for Pt/PLT(12)/Pt capacitor. With increasing La mole%, surface morphologies of the PLT films were improved smoothly and leakage current density decreased.

引用

页码：137 / 144

页数：8

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