MEMORY CELL AND TECHNOLOGY ISSUES FOR 64-MBIT AND 256-MBIT ONE-TRANSISTOR CELL MOS DRAMS

被引：69

作者：

TASCH, AF

PARKER, LH

机构：

来源：

PROCEEDINGS OF THE IEEE | 1989年 / 77卷 / 03期

关键词：

D O I：

10.1109/5.24125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：374 / 388

页数：15

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