TRANSITION-METAL SILICIDES - TRENDS IN THE BONDING IN THE BULK AND AT THE INTERFACE

被引：20

作者：

GRUNTHANER, PJ ^{[1
]}

GRUNTHANER, FJ ^{[1
]}

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF,LOS ANGELES,CA 90007

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.571803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：637 / 638

页数：2

共 4 条

[1] TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE
BISI, O
CALANDRA, C
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35): : 5479 - 5494
[2] GRUNTHANER PJ, UNPUB
[3] BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD, AND PT ON SILICON
OTTAVIANI, G
TU, KN
MAYER, JW
[J]. PHYSICAL REVIEW B, 1981, 24 (06): : 3354 - 3359
[4] NATURE OF THE VALENCE STATES IN SILICON TRANSITION-METAL INTERFACES
ROSSI, G
ABBATI, I
BRAICOVICH, L
LINDAU, I
SPICER, WE
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (02) : 195 - 198