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EFFECT OF EXCITON LOCALIZATION AND DELOCALIZATION ON MAGNETIC-FIELD-DEPENDENT PHOTOLUMINESCENCE LINE WIDTHS IN SEMICONDUCTORS

被引：4
作者：
LYO, SK
JONES, ED
KURTZ, SR
机构：
[1] Sandia National Laboratories, Albuquerque, NM 87185
来源：
JOURNAL OF LUMINESCENCE | 1994年 / 60-1卷
关键词：
D O I：
10.1016/0022-2313(94)90178-3
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Theory and data are presented for the photoluminescence line width in ordered and disordered semiconductor alloys at low temperatures. In disordered (ordered) systems, the line width is due to exciton localization (exciton-impurity scattering) and increases (decreases) as a function of the magnetic field in agreement with the data.
引用
收藏
页码：409 / 412
页数：4
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