THERMAL RESISTIVITY OF QUATERNARY SOLID-SOLUTION GA XIN1-XASYP1-Y LATTICE-MATCHED TO INP AND GAAS

被引：10

作者：

BOTH, W ^{[1
]}

HERRMANN, FP ^{[1
]}

机构：

[1] ACAD SCI GDR,ZENTRUM WISSENSCH LICHEN GERATEBAU,DDR-1199 BERLIN,GER DEM REP

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1982年 / 17卷 / 11期

关键词：

D O I：

10.1002/crat.2170171131

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：K117 / K122

页数：6

共 14 条

[1] LATTICE THERMAL CONDUCTIVITY OF DISORDERED SEMICONDUCTOR ALLOYS AT HIGH TEMPERATURES
ABELES, B
[J]. PHYSICAL REVIEW, 1963, 131 (05): : 1906 - &
[2] THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS
ABRAHAMS, MS
BRAUNSTEIN, R
ROSI, FD
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 204 - 210
[3] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS
AFROMOWITZ, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1292 - 1294
[4] INAS AND INSB AS THERMOELECTRIC MATERIALS
BOWERS, R
URE, RW
BAUERLE, JE
CORNISH, AJ
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (06) : 930 - 934
[5] INAS1-XPX AS A THERMOELECTRIC MATERIAL
BOWERS, R
BAUERLE, JE
CORNISH, AJ
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) : 1050 - 1054
[6] THERMAL CONDUCTIVITY OF GAAS AND GAAS1-XPX LASER SEMICONDUCTORS
CARLSON, RO
SLACK, GA
SILVERMAN, SJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) : 505 - +
[7] ENERGY BANDGAP AND LATTICE-CONSTANT CONTOURS OF III-V QUATERNARY ALLOYS
GLISSON, TH
HAUSER, JR
LITTLEJOHN, MA
WILLIAMS, CK
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 1 - 16
[8] AN EVALUATION OF THE THERMAL AND ELASTIC-CONSTANTS AFFECTING GAAS CRYSTAL-GROWTH
JORDAN, AS
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) : 631 - 642
[9] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M
MIYA, T
TERUNUMA, Y
HOSAKA, T
MIYASHITA, T
[J]. ELECTRONICS LETTERS, 1979, 15 (04) : 106 - 108
[10] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION
MOON, RL
ANTYPAS, GA
JAMES, LW
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) : 635 - 644

← 1 2 →