SPATIALLY VARIABLE DIELECTRIC FUNCTIONS IN SEMICONDUCTORS AND IONIZED-IMPURITY-LIMITED MOBILITY

被引：15

作者：

RICHARDSON, LM

SCARFONE, LM

机构：

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.18.5892

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5892 / 5894

页数：3

共 13 条

[1] SPACE DEPENDENCE OF DIELECTRIC FUNCTION IN SI CRYSTAL
AZUMA, M
SHINDO, K
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (03) : 424 - &
[2] BROOKS H, 1951, PHYS REV, V83, P779
[3] BROOKS H, 1955, ADV ELECTRON ELECTRO, V1, P128
[4] THEORY OF SCREENING OF IMPURITY IONS IN SEMICONDUCTORS WITH SPATIALLY-VARIABLE DIELECTRIC-CONSTANTS
CSAVINSZKY, P
[J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1649 - 1659
[5] VARIATIONAL TREATMENT OF POTENTIAL OF IMPURITY IONS IN SEMICONDUCTORS WITH SPATIALLY VARIABLE DIELECTRIC-CONSTANTS
CSAVINSZKY, P
[J]. INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 1978, 13 (02) : 221 - 226
[6] DINGLE RB, 1955, PHILOS MAG, V46, P831
[7] MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .2. THEORY
FALICOV, LM
CUEVAS, M
[J]. PHYSICAL REVIEW, 1967, 164 (03): : 1025 - &
[8] HERRING C, UNPUBLISHED
[9] IMPURITY SCATTERING IN SEMICONDUCTORS
MANSFIELD, R
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 76 - 82
[10] OKURA S, 1964, J PHYS SOC JPN, V20, P1099