FIELD-EFFECT CONDUCTION IN POLYALKYLTHIOPHENES

被引：52

作者：

PALOHEIMO, J

STUBB, H

YLILAHTI, P

KUIVALAINEN, P

机构：

[1] Semiconductor Laboratory, Technical Research Centre of Finland, SF-02150 Espoo

来源：

SYNTHETIC METALS | 1991年 / 41卷 / 1-2期

关键词：

D O I：

10.1016/0379-6779(91)91133-U

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Semiconducting poly(3-alkylthiophenes) with butyl, hexyl, octyl and decyl side chains have been electrically characterized using a thin film field-effect transistor structure. The mobility of the p-type charge carriers depends on the side chain length. The mobility is also affected by additional impurities and defects.

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页码：563 / 566

页数：4

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