USE OF TESTS AT ELEVATED TEMPERATURES TO ACCELERATE LIFE OF AN MOS INTEGRATED CIRCUIT

被引：11

作者：

REYNOLDS, FH

PARROTT, RW

BRAITHWA.D

机构：

来源：

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON | 1971年 / 118卷 / 3-4期

关键词：

D O I：

10.1049/piee.1971.0083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：475 / +

页数：1

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GROVE, AS ;

SNOW, EH .

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[6]

Knudsen J. F., 1970, Proceedings of the 1970 annual symposium on reliability, P237

[7]

Lytle W. J., 1970, Proceedings of the 1970 annual symposium on reliability, P386

[8]

PECK DS, 1962, SEMICONDUCTOR RELIAB, P51

[9] THEORETICAL THRESHOLD VOLTAGES FOR MOS FIELD EFFECT TRANSISTORS [J].

RICHMAN, P .

[10]

ROBERTS FF, 1964, POST OFF ELECT ENGRS, V57, P122