EXCESS VOLTAGE AND RESISTANCE IN SUPERCONDUCTOR-SEMICONDUCTOR JUNCTIONS

被引:23
作者
KLEINSASSER, AW
KASTALSKY, A
机构
[1] SUNY STONY BROOK,DEPT PHYS,STONY BROOK,NY 11794
[2] AT&T BELL LABS,HOLMDEL,NJ 07733
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 13期
关键词
D O I
10.1103/PhysRevB.47.8361
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the observation of excess voltage in Nb-InxGa1-xAs superconductor-semiconductor contacts (at large biases, the voltage in the superconducting state significantly exceeds that in the normal state). In addition, we describe an unusual temperature-dependent large-bias dynamic resistance, including a sudden increase as temperature decreases through the superconducting transition, a steady decrease with decreasing temperature below T(c), and a second smaller increase as temperature decreases through the onset temperature for the recently reported proximity-effect-induced pair current [A. Kastalsky et al., Phys. Rev. Lett. 67, 3026 (1991)]. These phenomena are discussed in terms of the rapidly evolving theory of superconductor-normal contacts with finite interface transmittance.
引用
收藏
页码:8361 / 8364
页数:4
相关论文
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