Channelling Patterns Based on Penetration of Low-Energy Ions

被引：3

作者：

Jech, C. ^{[1
]}

机构：

[1] Czechoslovak Acad Sci, Inst Phys Chem, Prague, Czech Republic

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1970年 / 3卷 / 03期

关键词：

D O I：

10.1002/pssa.19700030304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method for recording channelling patterns based on channelled penetration of low energy radioactive inert gas ions was improved by introducing a bombardment technique with a divergent ion beam of tracer ions. Channelling patterns were obtained with {111}, {110}, and {loo} surfaces of silicon using 10 keV Kr-85 and Xe-133 ions as tracers. A good resolution of individual channelling directions and planes exhibiting enhanced penetration of low energy ions was achieved. Alternative procedures for revealing channelling patterns are discussed.

引用

页码：579 / 583

页数：5

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