DEPTH DISTRIBUTION MEASUREMENTS USING BOMBARDMENT-ENHANCED SOLUBILITY

被引：10

作者：

JECH, C

机构：

[1] Institute of Physical Chemistry, Czechoslovak Academy of Sciences

来源：

PHYSICA STATUS SOLIDI | 1968年 / 27卷 / 02期

关键词：

D O I：

10.1002/pssb.19680270214

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A method is described which enables thin, uniform layers to be sectioned off from the surfaces of insulators and semiconductors. It is based on the formation of bombardment‐induced disorder in a layer of definite thickness by low‐energy ion bombardment and subsequent dissolving the disordered layer in a suitable solvent. The thickness of the layer thus removed after various times and conditions of ion bombardment is determined for silicon and mica using neutron activation analysis. The method is applied for determining the depth distribution of radon decay products injected by recoil from a planar radon source into mica. Copyright © 1968 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：573 / &

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