ADMITTANCE SPECTROSCOPY OF BORON DOPED DIAMOND

被引：7

作者：

GLESENER, JW

SNAIL, KA

MORRISH, AA

机构：

[1] Optical Sciences Division, Naval Research Laboratory, Washington

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.109332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The boron acceptor level in diamond was investigated using admittance spectroscopy. The conductance of a flame grown sample was measured between 125 and 200 K at five frequencies between 0.1 and 5.0 kHz using a 16.0 mV ac signal applied across a Schottky diode at zero dc bias. The admittance spectroscopy technique yielded a deep impurity level of 0.33 eV. From the same set of data, a hole capture cross section of 2 X 10(-12) cm2 was also measured. The cross section reported here is assumed to be caused by ionized boron acceptors.

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页码：181 / 183

页数：3

相关论文

共 14 条

[1] BULK ELECTRON TRAPS IN ZINC-OXIDE VARISTORS [J].

CORDARO, JF ;

SHIM, Y ;

MAY, JE .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4186-4190

[2] A THIN-FILM SCHOTTKY DIODE FABRICATED FROM FLAME-GROWN DIAMOND [J].

GLESENER, JW ;

MORRISH, AA ;

SNAIL, KA .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) :5144-5146

[3]

GLESENER JW, 1992, 1991 MRS FALL M S G, P161

[4] ADMITTANCE SPECTROSCOPY OF ZNO CRYSTALS [J].

KANAI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (08) :1426-1430

[5] INVESTIGATION OF TRAPPING STATES IN A NB-DOPED RUTILE BY ADMITTANCE SPECTROSCOPY [J].

KOBAYASHI, K ;

TAKATA, M ;

FUJIMURA, Y ;

OKAMOTO, S .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4191-4196

[6] ADMITTANCE SPECTROSCOPY OF IMPURITY LEVELS IN SCHOTTKY BARRIERS [J].

LOSEE, DL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2204-2214

[7]

Milnes A., 1973, DEEP IMPURITIES SEMI

[8] MATERIAL AND ELECTRICAL CHARACTERIZATION OF POLYCRYSTALLINE BORON-DOPED DIAMOND FILMS GROWN BY MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION [J].

NISHIMURA, K ;

DAS, K ;

GLASS, JT .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3142-3148

[9] CARRIER DENSITY DEPENDENT PHOTOCONDUCTIVITY IN DIAMOND [J].

PAN, LS ;

KANIA, DR ;

PIANETTA, P ;

LANDEN, OL .

APPLIED PHYSICS LETTERS, 1990, 57 (06) :623-625

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842